| PART |
Description |
Maker |
| RD100E RD6.2E R39E |
500 mW PLANAR TYPE SILICON ZENER DIODES
|
New Jersey Semi-Conduct...
|
| XN04381 XN4381 UN2122 UN2213 UNR2122 UNR2213 |
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits
|
PANASONIC[Panasonic Semiconductor]
|
| SF10J41A SF10G41A |
THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS
TOSHIBA THYRISTOR SILICON PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| USF5J49 SF5G49 SF5J49 USF5G49 |
Thyristor Silicon Planar Type Medium Power Control Applications
TOSHIBA Thyristor Silicon Planar Type
|
TOSHIBA[Toshiba Semiconductor]
|
| USF10J48 SF10G48 SF10J48 USF10G48 |
THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS
TOSHIBA THYRISTOR SILICON PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| XP4654 XP04654 |
Silicon NPN epitaxial planar type (Tr1), Silicon PNP epitaxial planar type (Tr2)
|
PANASONIC[Panasonic Semiconductor]
|
| DMG20402 |
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2)
|
Panasonic Semiconductor
|
| MT6C03AE |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MT3S03AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
Toshiba Semiconductor
|
| 2SB1492 2SD2254 2SB1490 2SD2250 |
Silicon NPN triple diffusion planar type Darlington(For power amplification)
Silicon PNP epitaxial planar type Darlington(For power amplification)
|
PANASONIC[Panasonic Semiconductor]
|
| XN09D58 |
Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD)
|
Panasonic Semiconductor
|
| 1N962 1N963 1N967 1N978 1N957 1N958 1N959 1N960 1N |
30 V, 4.2 mA, silicon planar zener diode
7.5 V, 16.5 mA, silicon planar zener diode
SILICON PLANAR ZENER DIODES
14PX2R TH STRAIGHT
CONN, 3PX1R TH STRAIGHT
CONN. 2 POSITIONS ALIGNED 2.54MM
1X30FT SELF-FUSING TAPE
DIP Socket; No. of Contacts:28; Pitch Spacing:0.1"; Row Spacing:0.6"; Terminal Type:Solder Tail; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes 硅平面稳压二极管
CONN HDR 8POS RT ANG POST 硅平面稳压二极管
DIP Socket; No. of Contacts:28; Pitch Spacing:0.1"; Row Spacing:0.6"; Terminal Type:Wire Wrap; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes
10 V, 12.5 mA, silicon planar zener diode
39 V, 3.2 mA, silicon planar zener diode
6.8 V, 18.5 mA, silicon planar zener diode
|
http://
SEMTECH[Semtech Corporation]
Semtech, Corp.
Honey Technology
|
